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| SUD45P03-10 Vishay Siliconix P-Channel 30-V (D-S), 150_C MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (W) 0.010 @ VGS = -10 V 0.018 @ VGS = -4.5 V ID (A)a -15 -12 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-10 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentb Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C PD TJ, Tstg TA = 25_C TA = 100_C ID IDM IS Symbol VDS VGS Limit -30 "20 -15 -8 -100 -15 70 4b -55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Symbol RthJA RthJC Typical Maximum 30 1.8 Unit _C/W _ Notes a. Calculated Rating for TA = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings and Typical Characteristics). b. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70766 S-02596--Rev. D, 21-Nov-00 www.vishay.com 2-1 SUD45P03-10 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 125_C VDS = -5 V, VGS = -10 V VDS = -5 V, VGS = -4.5 V VGS = -10 V, ID = -15 A Drain-Source On-State Resistancea rDS(on) VGS = -10 V, ID = -15 A, TJ = 125_C VGS = -4.5 V, ID = -15 A Forward Transconductancea gfs VDS = -15 V, ID = -15 A 20 -50 -20 0.010 0.015 0.018 S W A -30 V -1.0 "100 -1 -50 nA mA m Symbol Test Condition Min Typ Max Unit On-State Drain Currenta ID(on) Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = -15 V, RL = 0.33 W ID ^ -45 A, VGEN = -10 V, RG = 2.4 W VDS = -15 V, VGS = -10 V, ID = -45 A VGS = 0 V, VDS = -25 V, f = 1 MHz 6000 1100 700 90 20 16 15 375 100 140 25 550 200 250 ns 150 nC pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltagea Source-Drain Reverse Recovery Time ISM VSD trr IF = -45 A, VGS = 0 V IF = -45 A, di/dt = 100 A/ms 1.0 55 100 1.5 100 A V ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2-2 Document Number: 70766 S-02596--Rev. D, 21-Nov-00 SUD45P03-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10, 9, 8, 7 V 200 6V I D - Drain Current (A) 150 5V 100 4V 50 3V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 I D - Drain Current (A) 60 80 100 Transfer Characteristics 40 TC = 125_C 20 25_C -55_C VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 80 TC = -55_C 0.04 g fs - Transconductance (S) 60 r DS(on)- On-Resistance ( W ) 25_C 0.05 On-Resistance vs. Drain Current 125_C 40 0.03 0.02 VGS = 4.5 V VGS = 10 V 20 0.01 0 0 10 20 30 40 50 0.00 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Capacitance 8000 Ciss V GS - Gate-to-Source Voltage (V) 16 6000 C - Capacitance (pF) VDS = 15 V ID = 45 A 20 Gate Charge 12 4000 8 2000 Cos s 4 Crs 0 0 s 0 5 10 15 20 25 30 0 30 60 90 120 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 70766 S-02596--Rev. D, 21-Nov-00 www.vishay.com 2-3 SUD45P03-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 45 A r DS(on)- On-Resistance ( W ) (Normalized) 1.6 I S - Source Current (A) TJ = 150_C TJ = 25_C 10 100 Source-Drain Diode Forward Voltage 1.2 0.8 0.4 0.0 -50 1 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 20 500 Safe Operating Area 16 I D - Drain Current (A) I D - Drain Current (A) 100 Limited by rDS(on) 10 10, 100 ms 1 ms 10 ms 100 ms 1 TA = 25_C Single Pulse dc 0.1 0 25 50 75 100 125 150 0.1 1 10 100 TA - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) 1s 12 8 4 0 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 500 Square Wave Pulse Duration (sec) Document Number: 70766 S-02596--Rev. D, 21-Nov-00 www.vishay.com 2-4 |
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